Multiperiod piezoelectric-barrier all-optical light modulatorORTIZ, V; MULA, G; PELEKANOS, N. T et al.Microelectronics journal. 1999, Vol 30, Num 4-5, pp 409-412, issn 0959-8324Article

Planar isoelectronic perturbation as a probe of the mixed type band configuration in CdTe/(Cd, Zn)Te superlatticesPELEKANOS, N. T; PEYLA, P; LE SI DANG et al.Superlattices and microstructures. 1992, Vol 12, Num 2, pp 151-154, issn 0749-6036Article

Single dot spectroscopy on InAs/GaAs piezoelectric quantum dotsDIALYNAS, G. E; CHATZIDIMITRIOU, N; KALLIAKOS, S et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 11, pp 2566-2568, issn 1862-6300, 3 p.Conference Paper

Interface roughness correlation in CdTe/CdZnTe strained quantum wellsPELEKANOS, N. T; BOUDET, N; EYMERY, J et al.Journal of crystal growth. 1998, Vol 184-85, pp 886-889, issn 0022-0248Conference Paper

II-VI piezoelectric-barrier heterostructure for infrared light modulationORTIZ, V; PELEKANOS, N. T; MULA, G et al.Journal of crystal growth. 1998, Vol 184-85, pp 710-713, issn 0022-0248Conference Paper

Fast photorefractive materials using quantum wellsPELEKANOS, N. T; DEVEAUD, B; GUILLEMOT, C et al.Optical materials (Amsterdam). 1995, Vol 4, Num 2-3, pp 348-353, issn 0925-3467Conference Paper

Ultrathin pseudomorphic layers of ZnTe in CdTe/(Cd,Zn)Te superlattices : a direct optical probe of the mixed-type band configurationPELEKANOS, N. T; PEYLA, P; LE SI DANG et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 3, pp 1517-1524, issn 0163-1829Article

Quasi-two-dimensional excitons in (Zn,Cd)Se/ZnSe quantum wells : reduced exciton-LO-phonon coupling due to confinement effectsPELEKANOS, N. T; DING, J; HAGEROTT, M et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 11, pp 6037-6042, issn 0163-1829Article

Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applicationsKALAITZAKIS, F. G; ILIOPOULOS, E; KONSTANTINIDIS, G et al.Microelectronic engineering. 2012, Vol 90, Num Feb, pp 33-36, issn 0167-9317, 4 p.Conference Paper

A GaAs polariton light-emitting diode operating near room temperatureTSINTZOS, S. I; PELEKANOS, N. T; KONSTANTINIDIS, G et al.Nature (London). 2008, Vol 453, Num 7193, pp 372-375, issn 0028-0836, 4 p.Article

Micro-raman characterization of In_xGa_1-xN/GaN/Al₂O₃ heterostructuresKONTOS, A. G; RAPTIS, Y. S; PELEKANOS, N. T et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 15, pp 155336.1-155336.10, issn 1098-0121Article

Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescenceDIMAKIS, E; GEORGAKILAS, A; ANDROULIDAKI, M et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 476-480, issn 0022-0248, 5 p.Conference Paper

Quantum confined Stark effect (QCSE) and self-electro-optic effect device (SEED) in II-VI heterostructuresHAAS, H; GENTILE, P; MAGNEA, N et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 21, Num 2-3, pp 224-227, issn 0921-5107Conference Paper

Anti-binding of biexcitons in (21 1)B InAs/GaAs piezoelectric quantum dotsDIALYNAS, G. E; XENOGIANNI, C; TSINTZOS, S et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 6, pp 2113-2115, issn 1386-9477, 3 p.Conference Paper

Influence of polarization field on the lasing properties of III-nitride quantum wellsDIALYNAS, G. E; DELIGEORGIS, G; ZERVOS, M et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 558-561, issn 1386-9477, 4 p.Conference Paper

Resonant Raman characterization of InAlGaN/GaN heterostructuresCROS, A; CANTARERO, A; PELEKANOS, N. T et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 7, pp 1674-1678, issn 0370-1972, 5 p.Conference Paper

Field-compensated quaternary InAiGaN/GaN quantum wellsKALAÏTZAKIS, F; ANDROULIDAKI, M; GEORGAKILAS, A et al.Physica status solidi. B. Basic research. 2003, Vol 240, Num 2, pp 301-304, issn 0370-1972, 4 p.Conference Paper

Residual doping effects on the amplitude of polarization-induced electric fields in GaN/AlGaN quantum wellsSIMON, J; LANGER, R; BARSKI, A et al.Physica status solidi. A. Applied research. 2001, Vol 188, Num 2, pp 867-870, issn 0031-8965Conference Paper